ZgiBJN6PgadOwev6PbyEqkSlV5tUj8yIHCGJYJtbiYlMhXQcI6kNKTm3xupt
wangqingpu

Doctor

With Certificate of Graduation for Doctorate Study

山东大学

Recommended MA Supervisor

Personal Information

Gender:Male
Date of Employment:1987-07-01
Business Address:高新区软件校区微电子学院3B202室

VIEW MORE
Home > Scientific Research > Paper Publications

Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte

Release Time:2020-03-06 Hits:

Institution:微电子学院
Journal:IEEE Electron Device Letters
First Author:杜路路
All the Authors:徐明升,王卿璞,辛倩,Song A M
Document Code:2018zxsei1419
Volume:31
Issue:9
Page Number:1334
Translation or Not:No
Date of Publication:2018-12

Prev One:Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity

Next One:Tunable Surface Plasmon Polaritons with Monolithic Schottky Diodes

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:  | The Last Update Time:..  | Login | SDU