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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity

Release Time:2020-03-06 Hits:

Institution:微电子学院
Journal:IEEE Electron Device Letters
First Author:杨进
All the Authors:辛倩,王一鸣,周莉,王卿璞,Song A M
Document Code:2018zxsei1294
Volume:32
Issue:4
Page Number:516
Translation or Not:No
Date of Publication:2018-12

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