c70KlWEgWvRMqUhGrLH6vvsa1Ux9mvbdY0iFADVkWxbj01VYhbBLFb0hz0Ho
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Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes

Release Time:2022-11-17 Hits:

Institution:集成电路学院
Journal:Thin Solid Films
First Author:辛倩
Document Code:lw-180406
Volume:616
Issue:1
Page Number:569
Number of Words:5000
Translation or Not:No
Date of Publication:2016-09

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