High performance InGaZnO-based Schottky diodes fabricated at room temperature
Date of Publication:2015-09-13 Hits:
Affiliation of Author(s):微电子学院
Journal:Physica Status Solidi C
First Author:严林龙
Document Code:lw-180407
Number of Words:4500
Translation or Not:no
Date of Publication:2015-09-13
