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山东大学

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High performance InGaZnO-based Schottky diodes fabricated at room temperature

Release Time:2022-11-17 Hits:

Institution:集成电路学院
Journal:the 17th International Conference on II-VI Compounds and Related Materials (II-VI 2015)
First Author:严林龙
Document Code:lw-180407
Number of Words:4500
Translation or Not:No
Date of Publication:2015-09

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