TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics
发布时间：2019-10-24 点击数：
所属单位：信息科学与工程学院
论文名称：TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics
发表刊物：Journal of Semiconductors
第一作者：王卿璞
论文类型：应用研究
论文编号：lw-153554
卷号：35
期号：6
页面范围：064003-1
是否译文：否
发表时间：2014-06
上一条： The effects of selenization temperature on the properties of CIGS thin film prepared by Cu-In-Ga-Se precursors. Advanced Materials Research Vol. 528 (2012) pp 214-218.
下一条： High-dose ion-implanted photoresist stripping in environmentally benign supercritical CO2 nonfluorous surfactant microemulsions