王守志
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Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    CRYSTENGCOMM
  • First Author:
    刘磊
  • Document Code:
    52AE4BFE08514483BC24200655DD68FB
  • Volume:
    24
  • Issue:
    10
  • Page Number:
    1840
  • Translation or Not:
    no
  • Date of Publication:
    2022-03-07

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