王守志
Professor
Visit:次
Paper Publications
Home
Optimizing HVPE flow field to achieve GaN crystal uniform growth
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    journal of crystal growth
  • First Author:
    Wu, Yuzhu
  • Document Code:
    1655508995073851394
  • Volume:
    614
  • Number of Words:
    2
  • Translation or Not:
    no
  • Date of Publication:
    2023-07-15

Pre One:Research Progress on the Growth of GaN Single Crystal by Sodium Flux Method 基于钠助熔剂法的 GaN 单晶生长研究进展

Next One:Novel semiconductor materials for advanced supercapacitors

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University