王守志
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一种SiC单晶衬底及其制备方法与应用
  • Title:
    一种SiC单晶衬底及其制备方法与应用
  • Institution:
    新一代半导体材料研究院
  • Type of Patent:
    Invent
  • Application Number:
    202210119968.0
  • Number of Inventors:
    7
  • Service Invention or Not:
    No
  • Application Date:
    2022-01-28
  • Publication Date:
    2023-02-28
  • Authorization Date:
    2023-02-28
  • Release Time:
    2023-04-12
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