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Institution:集成电路学院
Title of Paper:High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact
Journal:IEEE Electron Device Letters
First Author:杜路路
All the Authors:辛公明,Zhitai Jia,Xutang Tao,Song A M,辛倩,徐明升,Wenxiang Mu,王鑫煜
Document Code:95E46522A7424B49812ABB6DBA13307C
Volume:40
Issue:3
Page Number:451
Translation or Not:No
Date of Publication:2019-03
Release Time:2019-10-24