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Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Release time:2019-04-13
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Affiliation of Author(s):
微电子学院
Journal:
IEEE Transactions on Electron Devices
All the Authors:
xinqian,Song A M,Shi Yanpeng,Li Yuxiang,wangqingpu
First Author:
Yiming Wang
Indexed by:
Unit Twenty Basic Research
Document Code:
C5CBECE11DEA4D5F8D7D91066B25046F
Volume:
65
Issue:
4
Page Number:
1377
Translation or Not:
no
Date of Publication:
2018-04-01