Improved performance of InSe field-effect transistors by channel encapsulation
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Improved performance of InSe field-effect transistors by channel encapsulation
- Journal:
- Semiconductor Science and Technology
- First Author:
- 梁广大
- All the Authors:
- 杨再兴,辛倩,Song A M
- Document Code:
- 229D178CE76143EAB1DD3BF02D002873
- Volume:
- 33
- Issue:
- 6
- Translation or Not:
- No
- Date of Publication:
- 2018-06
- Release Time:
- 2019-04-14