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Improved performance of InSe field-effect transistors by channel encapsulation

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Semiconductor Science and Technology
All the Authors:
yangzaixing,xinqian,Song A M
First Author:
梁广大
Indexed by:
Unit Twenty Basic Research
Document Code:
229D178CE76143EAB1DD3BF02D002873
Volume:
33
Issue:
6
Translation or Not:
no
Date of Publication:
2018-06-01