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High-Performance InGaZnO-Based ReRAMs

Release time:2019-06-06
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Affiliation of Author(s):
微电子学院
Journal:
IEEE Transactions on Electron Devices
All the Authors:
Yiming Wang,xinqian,Li Yuxiang,Song A M
First Author:
马鹏飞
Indexed by:
Unit Twenty Basic Research
Document Code:
30A3D463D46B446FAF932289DEB289FE
Volume:
66
Issue:
6
Page Number:
2600
Translation or Not:
no
Date of Publication:
2019-06-01