GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric
Release time:2019-06-07
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Semiconductor Science and Technology
- All the Authors:
- Yiming Wang,xinqian,xumingsheng,chenxiufang,xuxiangang,Feng Xianjin,Song A M
- First Author:
- 朱庚昌
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- 600382F594C94DF2908CDF75E37699EF
- Volume:
- 33
- Issue:
- 9
- Translation or Not:
- no
- Date of Publication:
- 2018-09-01