GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric
Release Time:2019-06-07
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric
- Journal:
- Semiconductor Science and Technology
- First Author:
- 朱庚昌
- All the Authors:
- 王一鸣,辛倩,徐明升,陈秀芳,徐现刚,冯先进,Song A M
- Document Code:
- 600382F594C94DF2908CDF75E37699EF
- Volume:
- 33
- Issue:
- 9
- Translation or Not:
- No
- Date of Publication:
- 2018-09
- Release Time:
- 2019-06-07