Schottky-barrier thin-film transistors based on HfO2-capped InSe
Release time:2019-10-13
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Applied physics letters
- All the Authors:
- Song A M,Yiming Wang,Shi Yanpeng,Yifei Zhang
- First Author:
- 辛倩
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- 7B2AFA27B7F54882ACFDC3B4111227BF
- Translation or Not:
- no
- Date of Publication:
- 2019-07-16