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Schottky-barrier thin-film transistors based on HfO2-capped InSe

Release time:2019-10-13
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Affiliation of Author(s):
微电子学院
Journal:
Applied physics letters
All the Authors:
Song A M,Yiming Wang,Shi Yanpeng,Yifei Zhang
First Author:
辛倩
Indexed by:
Unit Twenty Basic Research
Document Code:
7B2AFA27B7F54882ACFDC3B4111227BF
Translation or Not:
no
Date of Publication:
2019-07-16