Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation
Release Time:2019-06-12
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation
- Journal:
- Applied physics letters
- First Author:
- 朱庚昌
- All the Authors:
- 王一鸣,冯先进,Song A M
- Document Code:
- lw-178680
- Volume:
- 109
- Page Number:
- 113503
- Translation or Not:
- No
- Date of Publication:
- 2016-09
- Release Time:
- 2019-06-12