Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
Release Time:2019-10-22
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
- Journal:
- IEEE Electron Device Letters
- First Author:
- 杨进
- All the Authors:
- 辛倩,王一鸣,周莉,王卿璞,Song A M
- Document Code:
- 380A7EA0D0E84282A8B90E41FA3EADCD
- Volume:
- 39
- Issue:
- 4
- Page Number:
- 516
- Translation or Not:
- No
- Date of Publication:
- 2018-04
- Release Time:
- 2019-10-22