High-Performance InGaZnO-Based ReRAMs
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- High-Performance InGaZnO-Based ReRAMs
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- 马鹏飞
- All the Authors:
- Song A M,王一鸣,辛倩,Li Yuxiang
- Document Code:
- 30A3D463D46B446FAF932289DEB289FE
- Volume:
- 66
- Issue:
- 6
- Page Number:
- 2600
- Number of Words:
- 4
- Translation or Not:
- No
- Date of Publication:
- 2019-06
- Release Time:
- 2019-10-24