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High-Performance InGaZnO-Based ReRAMs

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
IEEE Transactions on Electron Devices
All the Authors:
Yiming Wang,xinqian,Li Yuxiang,Song A M
First Author:
马鹏飞
Document Code:
30A3D463D46B446FAF932289DEB289FE
Volume:
66
Issue:
6
Page Number:
2600
Number of Words:
4
Translation or Not:
no
Date of Publication:
2019-06-01