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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
IEEE Electron Device Letters
All the Authors:
xinqian,Yiming Wang,Zhou Li,wangqingpu,Song A M
First Author:
杨进
Document Code:
380A7EA0D0E84282A8B90E41FA3EADCD
Volume:
39
Issue:
4
Page Number:
516
Number of Words:
4
Translation or Not:
no
Date of Publication:
2018-03-22