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Improved performance of InSe field-effect transistors by channel encapsulation

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Semiconductor Science and Technology
All the Authors:
Yiming Wang,yangzaixing,xinqian,Song A M,
First Author:
梁广大
Document Code:
229D178CE76143EAB1DD3BF02D002873
Volume:
33
Issue:
6
Number of Words:
5
Translation or Not:
no
Date of Publication:
2018-06-01