Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
Release Time:2019-10-24
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- 王一鸣
- All the Authors:
- 辛倩,Song A M,Shi Yanpeng,Li Yuxiang,王卿璞,王一鸣
- Document Code:
- C5CBECE11DEA4D5F8D7D91066B25046F
- Volume:
- 65
- Issue:
- 4
- Page Number:
- 1377
- Translation or Not:
- No
- Date of Publication:
- 2018-04
- Release Time:
- 2019-10-24