All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory
- Journal:
- IEEE Electron Device Letters
- First Author:
- 杨进
- All the Authors:
- Song A M,王一鸣,王卿璞,周莉,辛倩
- Document Code:
- 2532544AF4F5476799F6AF1C6F32887A
- Volume:
- 39
- Issue:
- 12
- Page Number:
- 1876
- Number of Words:
- 4000
- Translation or Not:
- No
- Date of Publication:
- 2018-11
- Release Time:
- 2019-10-24