Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity
Release Time:2020-03-06
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- Institution:
- 微电子学院
- Title of Paper:
- Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity
- Journal:
- IEEE Electron Device Letters
- First Author:
- 杨进
- All the Authors:
- 辛倩,王一鸣,周莉,王卿璞,Song A M
- Document Code:
- 2018zxsei1294
- Volume:
- 32
- Issue:
- 4
- Page Number:
- 516
- Translation or Not:
- No
- Date of Publication:
- 2018-12
- Release Time:
- 2020-03-06