Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
Release Time:2020-06-05
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- Institution:
- 集成电路学院
- Title of Paper:
- Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
- Journal:
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- First Author:
- 马鹏飞
- Document Code:
- ED7FB9B9098F4949949DD0339CBED711
- Volume:
- 35
- Issue:
- 5
- Number of Words:
- 5
- Translation or Not:
- No
- Date of Publication:
- 2020-04
- Release Time:
- 2020-06-05