论文成果
Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications
  • 所属单位:
    信息科学与工程学院
  • 发表刊物:
    ACS Applied Nano Materials
  • 第一作者:
    桑鹏鹏
  • 论文编号:
    20B90BA1DBF442D48ECB1D4D160C22A8
  • 期号:
    6(8)
  • 字数:
    3
  • 是否译文:
  • 发表时间:
    2023-04-28

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