教育经历
  • 2010-9 — 2014-6
    山东大学
    集成电路设计与集成系统
    工学学士学位
  • 2016-9 — 2019-6
    山东大学
    电子科学与技术
    工学博士学位
工作经历
  • 2019-09 — 2022-03
     东京大学 
    博士后研究员
研究方向
论文成果

(1) 汪倩文.P-type cold-source field-effect transistors with TcX2 and ReX2 (X= S, Se) cold source electrodes: A computational study.Chinese Physics B.2023 (32)

(2) 冯扬.Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance.Journal of Semiconductors.2024,45 (1)

(3) 方晓彤.High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage.IEEE Transactions on CAD of Integrated Circuits and Systems (TCAD).2023,42 (10):3224

(4) 齐悦冉.An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory.MICROMACHINES.2023,14 (5)

(5) 冯扬.Fully Flash-Based Reservoir Computing Network With Low Power and Rich States.IEEE Transactions on Electron Devices.2023

(6) 桑鹏鹏.Tunable electrical contacts in two-dimensional silicon field-effect transistors: The significance of surface engineering.applied surface science.2023,614

(7) 陈博.Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing.纳米技术.2023,34 (50)

(8) 台路.Toward Low-Thermal-Budget Processing in Ferroelectric Hf0.5Zr0.5O2 Thin Films by Ozone Interface Oxidation.IEEE Electron Device Letters.2023,44 (12):1959-1962

(9) 台路.Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films.IEEE Electron Device Letters.2023 (44(5)):1

(10) 李晓鹏.Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms.2022

(11) 唐鸣丰.Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing.IEEE Transactions on Electron Devices.2023

(12) 冯扬.Near-Threshold-Voltage Operation in Flash-based High-Precision Computing-in-Memory to Implement Poisson Image Editing.SCIENCE CHINA-Information Sciences.2023 (333)

(13) 台路.Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films.IEEE Electron Device Letters.2023,44 (5):753

(14) 桑鹏鹏.Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications.ACS Applied Nano Materials.2023,6 (8):6849

(15) 台路.Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films.IEEE Electron Device Letters.2023 (44(5))

(16) 孙朝辉.Flash-based in-memory computing for stochastic computing in image edge detection.Journal of Semiconductors.2023 (44)

(17) 李晓鹏.Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair.IEEE Electron Device Letters.2023 (44(8))

(18) 冯扬.A Novel Array Programming Scheme for Large Matrix Processing in Flash-Based Computing-in-Memory (CIM) With Ultrahigh Bit Density.IEEE Transactions on Electron Devices.2023 (70)

(19) 桑鹏鹏.Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications.ACS Applied Nano Materials.2023 (6(8))

(20) 桑鹏鹏.Tunable electrical contacts in two-dimensional silicon field-effect transistors: The significance of surface engineering.Applied Surface Science.2023 (614)

(21) 赵国庆.Design-Technology Co-optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET based Neuromorphic Computing.IEEE Transactions on Nanotechnology.2022 (21)

(22) 唐鸣丰.Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing.IEEE Transactions on Electron Devices.2023 (70)

(23) 王成城.Complementary Digital and Analog Resistive Switching Based on AlOx Monolayer Memristors for Mixed-Precision Neuromorphic Computing.IEEE Transactions on Electron Devices.2023 (70)

(24) 冯扬.Fully Flash-based Reservoir Computing Network with Low Power and Rich States.IEEE Transactions on Electron Devices.2023 (7(9))

(25) 吴书昊.Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing.MICROELECTRONICS JOURNAL.2023 (137)

(26) 齐悦冉.An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory.MICROMACHINES.2023 (14(5))

(27) 李晓鹏.Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film:? Re-wakeup Phenomenon and Underlying Mechanisms.2022

(28) 赵国庆.Suppressing Interfacial Layer Degradation in Hf0.5Zr0.5O2-based FeFETs Using a Pre-erase Strategy during Program/Erase Cycling.2022

(29) 方晓彤.High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage.2022

(30) 李晓鹏.Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf0.5Zr0.5O2 film through comprehensive TDDB characterization.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS.2022,61 (10)

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