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Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers

Release time:2019-04-14|Hits:

Affiliation of Author(s):微电子学院

Journal:NANOSCALE

All the Authors:xiaohongdi,luancaina,maohongzhi,Jianqiang Liu,liuxiangdong

First Author:曹得重

Indexed by:Unit Twenty Basic Research

Document Code:D724A0DD21A549D288EB38A47DA64552

Volume: 9

Issue:32

Page Number:11504

Translation or Not:no

Date of Publication:2017-08-28

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Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers
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