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Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    NANOSCALE
  • First Author:
    曹得重
  • All the Authors:
    肖洪地,栾彩娜,毛宏志,Jianqiang Liu,刘向东
  • Document Code:
    D724A0DD21A549D288EB38A47DA64552
  • Volume:
    9
  • Issue:
    32
  • Page Number:
    11504
  • Translation or Not:
    No
  • Date of Publication:
    2017-08
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