Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates

Release Time:2022-01-18    Hits:

• Institution:
  集成电路学院
• Journal:
  Ceramics International
• First Author:
  肖洪地
• Document Code:
  686BD4C0C2214A248DAA9ADC14D17DAE
• Issue:
  47
• Page Number:
  9597
• Number of Words:
  4
• Translation or Not:
  No
• Date of Publication:
  2021-01