Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates

Release time:2022-01-18|Hits:

Affiliation of Author(s):集成电路学院

Journal:Ceramics International

First Author:肖洪地

Document Code:686BD4C0C2214A248DAA9ADC14D17DAE

Issue:47

Page Number:9597

Number of Words:4

Translation or Not:no

Date of Publication:2021-01-01