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Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates
Release Time:2021-05-28
  • Institution:
    集成电路学院
  • Journal:
    Journal of Materials Science: Materials in Electronics
  • First Author:
    王迪
  • Document Code:
    B219DC80D7834A9FA49D4957ED10C84F
  • Volume:
    32
  • Issue:
    3
  • Page Number:
    2757
  • Number of Words:
    5
  • Translation or Not:
    No
  • Date of Publication:
    2021-02
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