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Heteroepitaxial growth of the orthorhombic Ta2O5 single-crystalline films on epi-GaN/α-Al2O3 (0001) substrates by MOCVD

Release time:2022-12-17|Hits:

Affiliation of Author(s):集成电路学院

Journal:Ceramics International

First Author:马瑾

Document Code:FC05275B00DC4305A1EC798416E4AF56

Issue:48

Page Number:26800

Number of Words:5

Translation or Not:no

Date of Publication:2022-06-01

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Ta-Doped Ga2O3 Epitaxial Films on Porous p？GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors
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Effect of epitaxial growth rate on morphological, structural and optical properties of beta-Ga2O3 films prepared by MOCVD

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