xinqian 山东大学主页平台管理系统--Home

辛倩

Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Gender:Female
Alma Mater:山东大学
Education Level:With Certificate of Graduation for Doctorate Study
Degree:Doctor
Status:Employed
School/Department:微电子学院
Date of Employment:2012-09-14
Contact Information:xinq@sdu.edu.cn
E-Mail:xinq@sdu.edu.cn

MOBILE Version

Click:Times

The Last Update Time: ..

Current position: Home >> Scientific Research >> Paper Publications

Paper Publications

2015-09-02
[21] ZHANG Jiawei. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied physics letters, 107, 2015.
2016-06-30
[22] Jiawei Zhang. Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors b.... Applied Physics Letters, 108, 263503, 2016.
2017-04-11
[23] Ma, Xiaochen. A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors. Scientific Reports, 7, 2017.
2017-03-21
[24] Zhang, Jiawei. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Materials, 10, 2017.
2016-11-08
[25] 李云鹏. Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power. Scientific Reports, 6, 36183, 2016.
2015-09-13
[26] 严林龙. High performance InGaZnO-based Schottky diodes fabricated at room temperature. Physica Status Solidi C, 2015.
2015-01-01
[27] Nakayama, Yasuo. Ultraviolet Photoelectron Spectroscopy (UPS) I: Band Dispersion Measurements of Insulating Organi.... ELECTRONIC PROCESSES IN ORGANIC ELECTRONICS: BRIDGING NANOSTRUCTURE, ELECTRONIC STATES AND DEVICE PROPERTIES, 209, 11-26, 2015.
2017-05-01
[28] Wang, Qi. Picene thin films on metal surfaces: Impact of molecular shape on interfacial coupling. Physica Status Solidi: Rapid Research Letters, 11, 2017.
2022-03-01
[29] 陈大正. Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate. SCIENCE CHINA-MATERIALS, 65, 795, 2022.
2022-01-01
[30] 王珣珣. Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction. IEEE Electron Device Letters, 43, 44, 2022.
2022-04-01
[31] 董世林. Interfacial thermal transport of graphene/beta-Ga2O3 heterojunctions: a molecular dynamics study .... Phys. Chem. Chem. Phys。, 2022.
2022-10-11
[32] 李玲. 沟道层带尾态密度和厚度对ａ－ＩＧＺＯ薄膜晶体管特性影响的数值仿真. 《微电子学与计算机》, 2022.
2021-07-01
[33] 袁玉卓. Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransi.... IEEE Electron Device Letters, 42, 1010, 2021.
2021-07-23
[34] 林雨. Electrically Switchable and Flexible Color Displays Based on All-Dielectric Nanogratings. ACS Applied Nano Materials, 4, 7182, 2021.
2021-09-01
[35] 颜世琪. High-Performance Thin-Film IGZO Schottky Diodes With Sputtered PdOx Anode. IEEE Transactions on Electron Devices, 68, 4444, 2021.
2020-05-01
[36] 马鹏飞. Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35, 2020.
2018-12-30
[37] 李云鹏. Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 24, 208, 2018.
2018-12-30
[38] 杜路路. High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO. IEEE Transactions on Electron Devices, 40, 4326, 2018.
2019-03-12
[39] 张嘉炜. Extremely high-gain source-gated transistors. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 116, 4843, 2019.
2020-10-01
[40] 林雨. Electrical control of the optical dielectric properties of PEDOT:PSS thin films. Optical materials, 108, 2020.

total182 2/10

first previous next last Page

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University