辛倩
Professor
Gender:
Female
Alma Mater:
山东大学
Education Level:
With Certificate of Graduation for Doctorate Study
Degree:
Doctor
Status:
Employed
School/Department:
微电子学院
Date of Employment:
2012-09-14
Contact Information:
xinq@sdu.edu.cn
Paper Publications
-
2024-06-03
[1]
殷雪梅.
Electrolyte-Gated Amorphous IGZO Transistors with Extended Gates for Prostate-Specific Antigen De....
LAB ON A CHIP,
2024.
-
2022-01-01
[2]
董世林.
Interfacial thermal transport of graphene/β-Ga2O3 heterojunctions: a molecular dynamics study wi....
Physical chemistry chemical physics,
24,
12837-12848,
2022.
-
2024-04-08
[3]
郑帅英.
Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT.
NANOTECHNOLOGY,
35,
155203,
2024.
-
2024-04-08
[4]
郑帅英.
Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT.
NANOTECHNOLOGY,
35,
2024.
-
2023-11-30
[5]
王名扬.
Performance enhancement of solution-processed p-type CuI TFTs by self-assembled monolayer treatme....
applied surface science,
638,
2023.
-
2018-03-05
[6]
.
Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel....
IEEE Transactions on Electron Devices,
1377,
2018.
-
2023-06-27
[7]
杨华荣.
Efficient Suppression of Persistent Photoconductivity in β-Ga2O3-Based Photodetectors with Squar....
ACS Applied Materials & Interfaces,
15,
32561,
2023.
-
2022-01-01
[8]
王珣珣.
Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction.
IEEE Electron Device Letters,
43,
44-47,
2022.
-
2023-02-24
[9]
纪兴启.
Amorphous Ga2O3 Thin-Film Phototransistors for Imaging and Logic Illustration.
IEEE Electron Device Letters,
2023.
-
2023-01-01
[10]
纪兴启.
Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio,.
JOURNAL OF ALLOYS AND COMPOUNDS ,
2023.
-
2022-12-12
[11]
纪兴启.
High-Performance Thin Film Transistors with Sputtered IGZO/Ga2O3 Heterojunction.
IEEE Transactions on Electron Devices,
2022.
-
2023-01-01
[12]
颜世琪.
Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors ba....
APPLIED SURFACE SCIENCE,
2023.
-
2022-12-20
[13]
林晓昱.
High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodiz....
IEEE Transactions on Electron Devices,
537,
2022.
-
2023-02-17
[14]
林晓昱.
Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized A....
Semiconductor Science and Technology,
35023,
2023.
-
2023-02-01
[15]
高春禹.
Temperature uniformity analysis and multi-objective optimization of a small-scale variable densi....
THERMAL SCIENCE AND ENGINEERING PROGRESS,
2023.
-
2016-04-08
[16]
张嘉炜.
High performance Schottky diodes based on indium-gallium-zinc-oxide.
Journal of Vacuum Science & Technology A,
34,
2016.
-
2019-10-08
[17]
张翼飞.
Tunable Surface Plasmon Polaritons with Monolithic Schottky Diodes.
ACS Applied Electronic Materials,
2124,
2019.
-
2022-07-01
[18]
葛磊.
Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer.
Crystals,
12,
2022.
-
2020-10-01
[19]
林雨.
Electrical control of the optical dielectric properties of PEDOT:PSS thin films.
Optical materials,
108,
2020.
-
2015-07-03
[20]
ZHANG Jiawei.
Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.
NATURE COMMUNICATIONS,
6,
7561,
2015.
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