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辛倩

Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Gender:Female
Alma Mater:山东大学
Education Level:With Certificate of Graduation for Doctorate Study
Degree:Doctor
Status:Employed
School/Department:微电子学院
Date of Employment:2012-09-14
Contact Information:xinq@sdu.edu.cn
E-Mail:xinq@sdu.edu.cn

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Current position: Home >> Scientific Research >> Paper Publications

Paper Publications

2024-06-03
[1] 殷雪梅. Electrolyte-Gated Amorphous IGZO Transistors with Extended Gates for Prostate-Specific Antigen De.... LAB ON A CHIP, 2024.
2022-01-01
[2] 董世林. Interfacial thermal transport of graphene/β-Ga2O3 heterojunctions: a molecular dynamics study wi.... Physical chemistry chemical physics, 24, 12837-12848, 2022.
2024-04-08
[3] 郑帅英. Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT. NANOTECHNOLOGY, 35, 155203, 2024.
2024-04-08
[4] 郑帅英. Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT. NANOTECHNOLOGY, 35, 2024.
2023-11-30
[5] 王名扬. Performance enhancement of solution-processed p-type CuI TFTs by self-assembled monolayer treatme.... applied surface science, 638, 2023.
2018-03-05
[6] . Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel.... IEEE Transactions on Electron Devices, 1377, 2018.
2023-06-27
[7] 杨华荣. Efficient Suppression of Persistent Photoconductivity in β-Ga2O3-Based Photodetectors with Squar.... ACS Applied Materials & Interfaces, 15, 32561, 2023.
2022-01-01
[8] 王珣珣. Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction. IEEE Electron Device Letters, 43, 44-47, 2022.
2023-02-24
[9] 纪兴启. Amorphous Ga2O3 Thin-Film Phototransistors for Imaging and Logic Illustration. IEEE Electron Device Letters, 2023.
2023-01-01
[10] 纪兴启. Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio,. JOURNAL OF ALLOYS AND COMPOUNDS , 2023.
2022-12-12
[11] 纪兴启. High-Performance Thin Film Transistors with Sputtered IGZO/Ga2O3 Heterojunction. IEEE Transactions on Electron Devices, 2022.
2023-01-01
[12] 颜世琪. Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors ba.... APPLIED SURFACE SCIENCE, 2023.
2022-12-20
[13] 林晓昱. High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodiz.... IEEE Transactions on Electron Devices, 537, 2022.
2023-02-17
[14] 林晓昱. Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized A.... Semiconductor Science and Technology, 35023, 2023.
2023-02-01
[15] 高春禹. Temperature uniformity analysis and multi-objective optimization of a small-scale variable densi.... THERMAL SCIENCE AND ENGINEERING PROGRESS, 2023.
2016-04-08
[16] 张嘉炜. High performance Schottky diodes based on indium-gallium-zinc-oxide. Journal of Vacuum Science & Technology A, 34, 2016.
2019-10-08
[17] 张翼飞. Tunable Surface Plasmon Polaritons with Monolithic Schottky Diodes. ACS Applied Electronic Materials, 2124, 2019.
2022-07-01
[18] 葛磊. Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer. Crystals, 12, 2022.
2020-10-01
[19] 林雨. Electrical control of the optical dielectric properties of PEDOT:PSS thin films. Optical materials, 108, 2020.
2015-07-03
[20] ZHANG Jiawei. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz. NATURE COMMUNICATIONS, 6, 7561, 2015.

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