Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films.
发布时间:2026-04-01
点击次数:
- 论文名称:
- Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films.
- 发表刊物:
- ACS Applied Electronic Materials
- DOI码:
- 10.1021/acsaelm.2c00608
- 是否译文:
- 否
- 发表时间:
- 2022-07
- 发布时间:
- 2026-04-01

