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Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Release time:2023-12-26|Hits:

Affiliation of Author(s):能源与动力工程学院

Journal:IEEE Transactions on Electron Devices

First Author:马德志

Document Code:1726496218095108098

Number of Words:4

Translation or Not:no

Date of Publication:2023-10-17

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