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Effects of temperature and charged vacancies on electronic and optical properties of β-Ga2O3 after radiation damage

Release time:2023-12-26|Hits:

Affiliation of Author(s):能源与动力工程学院

Journal:Optics Express

First Author:张校宁

Document Code:1737383241399595009

Volume:31

Issue:24

Page Number:40765-40778

Number of Words:5

Translation or Not:no

Date of Publication:2023-11-20

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Thermal transport of defective β-Ga2O3 and B(In)GaO3 alloys from atomistic simulations
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Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

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