Yang Kejian 山东大学主页平台管理系统--Home

Yang Kejian

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Doctor

Postgraduate (Postdoctoral)

山东大学

Personal Information:

Gender:Male
Date of Employment:2007-08-01

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Home > Scientific Research > Paper Publications

[391] zhaoshengzhi , liguiqiu , Yang Kejian and lidechun. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber. Optics Express, 22, 14812, 2014.
[392] zhaoshengzhi , liguiqiu , Yang Kejian and lidechun. Diode-pumped Passively Q-switched Nd:GGG Laser with a Bi–doped GaAs Semiconductor Saturable Abso.... Optics communications, 332, 292, 2014.
[393] zhaoshengzhi , liguiqiu , Yang Kejian and lidechun. The electronic and optical properties of quaternary GaAs1-x-yNxBiy alloy lattice-matched to GaAs:.... Nanoscale research letters, 9, 580, 2014.
[394] liguiqiu , lidechun , Yang Kejian and zhaoshengzhi. Diode Pumped Passively Q Switched and Mode Locked Nd:Lu0.15Y0.85VO4 Laser with a GaAs Saturable A.... Laser Physics, 21, 1769, 2011.
[395] lidechun , liguiqiu , Yang Kejian and zhaoshengzhi. Optimization of the pulse-width of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 .... Applied Optics, 50, 5970, 2011.
[396] fengchuansheng , zhaoshengzhi , liyufei , Yang Kejian , liguiqiu , lidechun , qiaowenchao , Li Tao and Zhao Jia. Passively Q-switched and mode-locked dual-wavelength Nd:GGG laser with Cr4+:YAG as a saturable ab.... Optics communications, 315, 8, 2014.
[397] zhaoshengzhi , wangxiaomei , Yang Kejian , lidechun , qiaowenchao and liguiqiu. Passively Q-switched laser performance of a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with GaAs s.... OPTICAL AND QUANTUM ELECTRONICS, 46, 1179, 2014.
[398] lidechun , liguiqiu , Yang Kejian and zhaoshengzhi. Passively Q-switched laser performance of the mixed crystals Nd:Lu0.15Y0.85VO4, Nd:Lu0.5Y0.5VO4 a.... Opt.Quant.Electron., 45, 233, 2013.
[399] zhaoshengzhi , Yang Kejian and lidechun. Simulation of the passively mode-locked laser with a SESAM. Optik, 123, 2191, 2012.
[400] zhaoshengzhi , liguiqiu , Yang Kejian and lidechun. First principle study of the elastic properties of InGaAs with different doping concentrations of.... Molecular Simulation, 38, 84, 2012.

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