Title : 单晶锗锰磁性半导体/锗磁性异质结二极管及其制备方法
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Title:单晶锗锰磁性半导体/锗磁性异质结二极管及其制备方法
Affilication of Author(s):物理学院
Patent Applicant:yanshishen
Type of Patent:发明
Application Number:200910017191.1
Number of Inventors:1
Service Invention or Not:no
Application Date:2009-08-06
The Last Update Time : ..