Title : 集记忆电阻与隧穿磁电阻的自旋记忆电阻器件及制备方法
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Title:集记忆电阻与隧穿磁电阻的自旋记忆电阻器件及制备方法
Affilication of Author(s):物理学院
Patent Applicant:yanshishen
Type of Patent:发明
Application Number:201210449048.1
Number of Inventors:1
Service Invention or Not:no
Application Date:2012-11-09
Publication Date:2014-08-13
Authorization Date:2014-08-13
The Last Update Time : ..