中文

A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

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  • Institution:信息科学与工程学院

  • Title of Paper:A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

  • Journal:Applied Surface Science

  • First Author:杨志远

  • All the Authors:于法鹏,王正平,陈秀芳,程秀凤,赵显,杨志远

  • Document Code:2018zxsei1451

  • Volume:37

  • Page Number:511

  • Translation or Not:No

  • Date of Publication:2018-04

  • Release Time:2020-03-06

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