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    Induced growth of quasi-free-standing graphene on SiC substrates

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:Induced growth of quasi-free-standing graphene on SiC substrates

    • Journal:RSC advances

    • First Author:于法鹏

    • All the Authors:李清波,孙丽,杨志远,李妍璐,赵显,于法鹏

    • Document Code:87C4BAAC3DFA436D9FCD360E5504F498

    • Number of Words:3

    • Translation or Not:No

    • Date of Publication:2019-09

    • Release Time:2020-03-06
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