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A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism

发布时间：2021-06-02 点击数：

所属单位：晶体材料研究院（晶体材料全国重点实验室）

论文名称：A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism

发表刊物：ACS Applied Materials & Interfaces

第一作者：李妍璐

论文编号：30C0D22F63DB4CF596614121E63AC4D9

期号：12

字数：5

是否译文：否

发表时间：2019-12

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于法鹏 (教授)

A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism