Origin of the abnormal reduction of the dielectric response for ReCOB crystals and its mechanism: theoretical and experimental exploration
所属单位:晶体材料研究院(晶体材料全国重点实验室)
论文名称:Origin of the abnormal reduction of the dielectric response for ReCOB crystals and its mechanism: theoretical and experimental exploration
发表刊物:Journal of Materials Chemistry C
第一作者:卢鑫雨
论文编号:9FFEB2FBAEAF44FE912A653B08D38559
卷号:8
期号:29
页面范围:10109
字数:5
是否译文:否
发表时间:2020-08
上一条: Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitaxial graphene on 6H-SiC(0001) via boron compound intercalations
下一条: A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism