郁万成
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Two-step growth method of graphene on silicon carbide for Hall effect sensors: decoupling buffer layer formation from graphene growth
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Two-step growth method of graphene on silicon carbide for Hall effect sensors: decoupling buffer layer formation from graphene growth
  • Journal:
    中国化学会第一届全国表界面科学会议
  • First Author:
    姜晓呈
  • Document Code:
    85D2FBA3785F4AC7BA517874DD242EFF
  • Number of Words:
    1
  • Translation or Not:
    No
  • Date of Publication:
    2025-05
  • Release Time:
    2025-05-24
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