郁万成
Professor
Visit:次
Personal Information
  • E-Mail:
  • Date of Employment:
    2022-06
  • School/Department:
    新一代半导体材料研究院
  • Education Level:
    With Certificate of Graduation for Doctorate Study
  • Business Address:
    半导体研发大楼308
  • Gender:
    Male
  • Contact Information:
  • Degree:
    Doctoral Degree in Engineering
  • Alma Mater:
    山东大学
  • Supervisor of Master's Candidates
  • Supervisor of Doctorate Candidates
Discipline:
Integrated Circuit Engineering;
Materials Science and Engineering;
Publication
Paper Publications

1. 张宁. Numerical simulation of thick SiC crystal based on ring-shaped powder structure .Journal of crystal growth.2025,665

2. 姜嘉琦. Self-Supported SiC@graphene Hierarchical Electrodes for Ultra-Stable Supercapacitors .中国化学会第一届全国表界面科学会议.2025

3. 姜晓呈. Two-step growth method of graphene on silicon carbide for Hall effect sensors: decoupling buffer layer formation from graphene growth .中国化学会第一届全国表界面科学会议.2025

4. 姜晓呈. SiC wafer chamfering process research .2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS).2024

5. 王兴龙. Hot-zone design and optimization of resistive heater for SiC single crystal growth .JOURNAL OF MATERIALS SCIENCE Journal.2024 (19)

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