郁万成
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Optimization of Thermal Field for Large Scale SiC Growth with Resistance Heating Method
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Optimization of Thermal Field for Large Scale SiC Growth with Resistance Heating Method
  • Journal:
    2025 22st China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
  • First Author:
    刘鹏
  • All the Authors:
    徐现刚,胡小波,王丽焕,陈秀芳
  • Document Code:
    65C70326BCAC48D19703F2BB7AEFD9D6
  • Number of Words:
    2
  • Translation or Not:
    No
  • Date of Publication:
    2025-11
  • Release Time:
    2026-01-15
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