Project Name:HVPE方法在6H-SiC衬底上生长GaN晶体的应力与表面生长动力学关系研究

Institution:晶体材料研究院（晶体材料全国重点实验室）

Leading Scientist:张雷

Supported by:国家自然基金委

Nature of Project:纵向

Project Level:National

Project Participants:张雷

Project Number:kyxm-56645

Project Approval Number:51402171

Date of Project Approval:2014-08-15

Scheduled Completion Time:2017-12-31

Date of Project Completion:2017-12-31

Date of Project Initiation:2015-01-01

Release Time:2019-04-18