张雷，长聘研究员, 博士生导师，山东省泰山学者青年专家。2016-2018年期间在德国亥姆霍兹于利希研究中心从事访问学者研究。

主要从事氮化物（氮化镓、氮化铝）宽禁带半导体晶体材料的生长及性能研究工作。目前担任氮化物半导体晶体研究方向负责人（PI）。研制了具有自主知识产权的氢化物气相外延（HVPE）GaN单晶生长装备和物理气相沉积法（PVT）AlN单晶生长装备，系统研究了GaN、AlN晶体的生长机理，围绕应力及开裂、衬底分离难题，提出了二维位错阻断层、多孔衬底技术等解决方案，攻克了大尺寸GaN、AlN晶体生长关键技术，晶体质量步入国际先进行列。主持和参加了国家重点研发计划、863、国家自然科学基金、德国亥姆霍兹国家实验室资助、山东省重点研发计划等10余项国家及省部级项目。在Adv. Mater., Adv. Sci., J. Mater. Chem. A, Cryst. Growth Des.等期刊发表SCI论文70余篇，发表的文章被Nature Materials期刊作为研究亮点（Research Highlights）进行了报道。获授权发明专利20余项，其中4项实现了成果转化。2016年获中国建筑材料科学技术基础研究类二等奖。目前担任国际期刊《Scientific Reports》编委和《Materials》期刊客座编辑。

• 2001/09/01-2005/07/01
  齐鲁工业大学
  无机非金属材料工程
• 2005/09/01-2008/07/01
  齐鲁工业大学
  无机非金属材料工程
• 2008/09/01-2011/12/01
  山东大学
  材料学

• 2012-06 — 2016-02
  山东大学晶体材料国家重点实验室
• 2016-04 — 2018-04
  德国亥姆霍兹于利希研究中心固态物理研究所
• 2016-03 — Now
  山东大学晶体材料国家重点实验室

1. 宽禁带半导体（GaN、AlN等）晶体材料的生长及应用研究工作

(1)Sha, Shiyu. Silicon Carbide Nanowire Based Integrated Electrode for High Temperature Supercapacitors .Materials .2024 ,17 (16)

(2)曹文豪. Suitable AlN Source Shape for Optimizing Gas Mass Transfer During AlN Crystal Growth .CRYSTAL GROWTH & DESIGN .2024 (566)

(3)齐占国. Progress in GaN Single Crystals: HVPE Growth and Doping .Journal of Inorganic Materials .2023 ,38 (3):243

(4)李秋波. Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing .Applied Surface Science .2024 (679)

(5)吕松阳. Gallium Nitride Based Electrodefor High-Temperature Supercapacitor .Advanced Science .2023 ,10 (15)

(6)Cao, Wenhao. Effect of Air Layer Thickness on AlN Crystal Growth by the PVT Method .CRYSTAL GROWTH & DESIGN .2024

(7)Cao, Wenhao. Optical properties of conductive and semi-insulating HVPE-GaN crystals .CrystEngComm .2024

(8)孙德福. Research Progress in Liquid Phase Growth of GaN Crystals .chemistry-a European journal .2024

(9)Wang, Benfa. Studying the effect of temperature and pressure on GaN crystals via the Na-flux method .CrystEngComm .2024 ,26 (24):3176-3184

(10)Wang, Benfa. Research Progress on the Growth of GaN Single Crystal by Sodium Flux Method 基于钠助熔剂法的 GaN 单晶生长研究进展 .《人工晶体学报》 .2023 ,52 (2):183-195

(11)Liang, Chang. Novel semiconductor materials for advanced supercapacitors .Journal of Materials Chemistry C .2023 ,11 (13):4288-4317

(12)Li, Qiubo. Research progress in the postprocessing and application of GaN crystal .CrystEngComm .2023 ,25 (5):715-725

(13)曹文豪. Investigation of the optical properties of conductive and semi-insulating HVPE-GaN crystals .CrystEngComm .2024 (26)

(14)Fei, Tianhao. Temperature-sensitive hybridization of propagating and localized surface phonon polaritons in polar 4H-SiC nano-resonators .JOURNAL OF APPLIED PHYSICS .2022 ,132 (12)

(15)费天皓. Temperature-dependent infrared dielectric functions and hybrid phonon-polaritons in wurtzite GaN: A spectroscopic ellipsometry and multiscale simulation study .JOURNAL OF APPLIED PHYSICS .2022 (9)

(16)吕松阳. Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage .J. Mater. Chem. A. .2022 (41):22007

(17)李秋波. A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors .Journal of Materials Chemistry C .2022 ,10 (21):8321-8328

(18)王守志. Construction of Novel Bimetallic Oxyphosphide as Advanced Anode for Potassium Ion Hybrid Capacitor .Advanced Science .2022 (9):2105193

(19)费天皓. Temperature-dependent infrared dielectric functions and hybrid phonon-polaritons in wurtzite GaN: A spectroscopic ellipsometry and multiscale simulation study .Journal of Applied Physics .2022 ,131 (9)

(20)刘磊. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates .CRYSTENGCOMM .2022 ,24 (10):1840

(21)王忠新. Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications .JOURNAL OF MATERIALS CHEMISTRY C .2021 (7):17201

(22)刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN .CRYSTENGCOMM .2021 ,23 (41):7245

(23)俞瑞仙. Ultrawide-bandgap semiconductor AlN crystals: growth and applications .Journal of Materials Chemistry C .2021 ,9 (6):1852

(24)陈成敏. Numerical Simulation Study on the Front Shape and Thermal Stresses in Growing Multicrystalline Silicon Ingot: Process and Structural Design .CRYSTALS .2020 ,10 (11)

(25)王国栋. Growth and Stress Analysis of Spontaneous Nucleationc-Plane Bulk AlN Crystals by a PVT Method .CRYSTAL RESEARCH AND TECHNOLOGY .2020 ,55 (10)

(26)俞娇仙. Perovskite CsPbBr3 crystals: growth and applications .材料化学期刊C .2020 ,8 (19):6326

(27)yuruixian. From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors .材料化学期刊C .2019 ,7 (45):14116

(28)wangguodong. Effect of Temperature Gradient on AlN Crystal Growth by Physical Vapor Transport Method .CRYSTAL GROWTH & DESIGN .2019 ,19 (11):6736

(29)王国栋. High-aspect-ratio single-crystalline AlN nanowires: Free-catalytic PVT growth and field-emission studies .JOURNAL OF ALLOYS AND COMPOUNDS .2019 (794)

(30)王守志. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials .ADVANCED MATERIALS .2016 (28):3768

(31) Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate .ACS Appl. Mater. Interfaces .2015

1. 一种亚表面无损伤氮化镓晶片的加工工艺

2. 一种一步烧结高质量氮化铝原料的方法

3. 一种蓝宝石模板上GaN单晶衬底高温激光剥离装置及剥离方法

4. 一种基于多孔宽禁带半导体材料的高温大功率超级电容器及其制备方法

5. 一种用于氮化铝单晶生长的籽晶粘接方法

6. 一种用于电阻法氮化铝晶体生长炉的热场及其装配方法

7. 一种用于氮化铝单晶生长籽晶背部镀膜的方法

8. 一种亚表面无损伤氮化镓晶片的加工工艺

9. 一种蓝 宝石模板上GaN单晶衬底高温激光剥离装置及剥离方法

10. 一种用于GaN单晶生长衬底的处 理方法及处理装置

1. 4英寸低位错密度半绝缘GaN单晶生长研究, 2024/08/23-2028/12/31

2. GFJG-***单晶衬底与外延材料KM20240048, 2023/06/07-2024/06/30

3. 基于氨热法GaN单晶衬底的表征技术研发, 2024/01/01-2025/01/31

4. Y-电阻法生长高质量、高紫外透过率AlN单晶研究, 2022/06/28-2023/12/31

5. 电阻法生长高质 量、高紫外透过率AlN单晶研究-2023/10/31, 在研

6. 镓系宽禁半导体制备技术研究-2025/01/31, 在研

7. 2英寸高质量AlN单晶生长及其器 件应用研究-2024/10/31, 在研

8. 不同衬底上生长的GaN晶体的应力和位错之间关系的研究, 2018/09/01-2019/12/31

9. GaN晶体的应力、缺陷和能带结构之间关系的研究, 2018/08/16-2022/12/31

10. HVPE方法在6H-SiC衬底上生长GaN晶体的应力与表面生长动力学关系研究, 2014/08/15-2017/12/31