Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage
Affiliation of Author(s):
晶体材料研究院
Journal:
J. Mater. Chem. A.
First Author:
吕松阳
Document Code:
6A324EE074934A8B9C390E71EE25AEFC
Issue:
41
Page Number:
22007
Translation or Not:
no
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