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Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

Release Time:2023-05-17| Hits:

Institution:晶体材料研究院（晶体材料全国重点实验室）

Title of Paper:Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

Journal:J. Mater. Chem. A.

First Author:吕松阳

Document Code:6A324EE074934A8B9C390E71EE25AEFC

Issue:41

Page Number:22007

Translation or Not:No

Date of Publication:2022-10

Release Time:2023-05-17

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