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zhanglei

张雷,长聘研究员, 博士生导师,山东省泰山学者青年专家。2016-2018年期间在德国亥姆霍兹于利希研究中心从事访问学者研究。 主要从事氮化物(氮化镓、氮化铝)宽禁带半导体晶体材料的生长及性能研究工作。目前担任氮化物半导体晶体研究方向负责人(PI)。研制了具有自主知识产权的氢化物气相外延(HVPE)GaN单晶生长装备和物理气相沉积法(PVT)AlN单晶生长装备,系统研究了GaN、AlN晶体的生长机理,围绕应力及开裂、衬底分离难题,提出了二维位错阻断层、多孔衬底技术等解决方案,... More+

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  • [1] 宽禁带半导体(GaN、AlN等)晶体材料的生长及应用研究工作

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