Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors
Release time:2019-10-24
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- Affiliation of Author(s):
- 集成电路学院
- Journal:
- IEEE Transactions on Electron Devices
- All the Authors:
- Xijian Zhang,Li Yuxiang,chenxiufang,xuxiangang,zhaoxian,Song A M
- First Author:
- 杨乐陶
- Document Code:
- C378AC35A5AB4595ADA7AFF720512A91
- Volume:
- 64
- Issue:
- 4
- Page Number:
- 1846
- Translation or Not:
- no
- Date of Publication:
- 2017-04-01